Dopant diffusion under pressure and stress

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2003-January, Issue , 2003, Pages 137-142

  Aziz, M J ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

Anisotropic magnetoresistance; Crystals; Impurities; Pressure control; Semiconductor devices; Stability; Stress control; Thermal expansion; Thermal stresses; Thermodynamics

Indexed keywords

ANISOTROPY; CONVERGENCE OF NUMERICAL METHODS; CRYSTAL IMPURITIES; CRYSTALS; DEFECTS; DIFFUSION; ENHANCED MAGNETORESISTANCE; HYDRAULICS; IMPURITIES; POINT DEFECTS; PRESSURE CONTROL; THERMAL EXPANSION; THERMAL STRESS; THERMODYNAMICS;

ARBITRARY DIRECTION; ATOMISTIC CALCULATIONS; BIAXIAL COMPRESSION; DEFECT POPULATION; EQUILIBRIUM POINT; HYDROSTATIC COMPRESSION; STRESS CONTROL; THERMODYNAMIC RELATIONSHIPS;

SEMICONDUCTOR DEVICES;

EID: 50949083572     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2003.1233656     Document Type: Conference Paper

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