Ab initio calculations of the structure and energetics of As-vacancy complexes in silicon

Journal of Physics D: Applied Physics

Volumn 32, Issue 11, 1999, Pages 1252-1257

  Xie, Jianjun ^a   Chen, S P ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; BINDING ENERGY; CHEMICAL BONDS; CRYSTAL LATTICES; DIFFUSION IN SOLIDS; POINT DEFECTS; POTENTIAL ENERGY; SEMICONDUCTOR DOPING;

ATOMISTIC DIFFUSION SIMULATION; DENSITY FUNCTIONAL THEORY (DFT); PLANE WAVE PSEUDOPOTENTIAL METHODS;

SEMICONDUCTING SILICON;

EID: 0033532470     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/32/11/311     Document Type: Article

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