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Volumn 32, Issue 11, 1999, Pages 1252-1257

Ab initio calculations of the structure and energetics of As-vacancy complexes in silicon

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; BINDING ENERGY; CHEMICAL BONDS; CRYSTAL LATTICES; DIFFUSION IN SOLIDS; POINT DEFECTS; POTENTIAL ENERGY; SEMICONDUCTOR DOPING;

EID: 0033532470     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/32/11/311     Document Type: Article
Times cited : (22)

References (19)
  • 7
    • 10644250257 scopus 로고
    • Hohenberg P and Kohn W 1964 Phys. Rev. B 136 864 Kohn W and Sham L J 1965 Phys. Rev. B 140 A1133
    • (1964) Phys. Rev. B , vol.136 , pp. 864
    • Hohenberg, P.1    Kohn, W.2
  • 8
    • 0042113153 scopus 로고
    • Hohenberg P and Kohn W 1964 Phys. Rev. B 136 864 Kohn W and Sham L J 1965 Phys. Rev. B 140 A1133
    • (1965) Phys. Rev. B , vol.140
    • Kohn, W.1    Sham, L.J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.