Boron diffusion in strained and relaxed Si1-xGex

Defect and Diffusion Forum

Volumn , Issue 194-199 PART 1, 2001, Pages 703-708

  Zangenberg, N R ^a   Fage Pedersen, J ^a   Lundsgaard Hansen, J ^a   Nylandsted Larsen, A ^a  

^a AARHUS UNIVERSITY   (Denmark)

Author keywords

Boron; Diffusion; Silicon; Silicon Germanium; Strain

Indexed keywords

ACTIVATION ENERGY; ANNEALING; BORON; DIFFUSION; EPITAXIAL GROWTH; RELAXATION PROCESSES; SANDWICH STRUCTURES;

TENSILE STRAIN;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 17144456490     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.194-199.703     Document Type: Article

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