Monte Carlo simulation of Hall and magnetoresistance mobility in SOI devices

Solid-State Electronics

Volumn 51, Issue 9, 2007, Pages 1216-1220

  Donetti, L ^a   Gamiz, F ^a   Cristoloveanu, S ^b  

^a UNIVERSITY OF GRANADA   (Spain)

^b IMEP LAHC   (France)

Author keywords

Electron mobility; Geometric magnetoresistance; Hall mobility; Monte Carlo; SOI

Indexed keywords

ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; HALL MOBILITY; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; MONTE CARLO METHODS; SILICON ON INSULATOR TECHNOLOGY;

MAGNETORESISTANCE MOBILITY; SILICON ON INSULATOR DEVICES; SUBBAND SPLITTING;

SEMICONDUCTOR DEVICES;

EID: 34548569256     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.07.022     Document Type: Article

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