A theoretical interpretation of magnetoresistance mobility in silicon inversion layers

Journal of Applied Physics

Volumn 102, Issue 1, 2007, Pages

  Donetti, L ^a   Gamiz F ^a   Cristoloveanu, S ^b  

^a UNIVERSITY OF GRANADA   (Spain)

^b IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; MAGNETORESISTANCE; MOMENTUM; RELAXATION TIME; SILICON ON INSULATOR TECHNOLOGY; TRANSISTORS;

CHANNEL LENGTH; DEVICE LENGTHS; DRIFT MOBILITY; MAGNETORESISTANCE MOBILITY; MOBILITY EXTRACTION;

MOS DEVICES;

EID: 34547159250     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2752103     Document Type: Article

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