A reliable metric for mobility extraction of short-channel MOSFETs

IEEE Transactions on Electron Devices

Volumn 54, Issue 10, 2007, Pages 2690-2698

  Severi, Simone ^a   Pantisano, Luigi ^a   Augendre, Emmanuel ^b   San Andrés, Enrique ^c   Eyben, Pierre ^a   De Meyer, Kristin ^a  

^a IMEC   (Belgium)

^b CEA GRENOBLE   (France)

^c UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

Length and resistance measurements; MOSFET; Scattering

Indexed keywords

CARRIER MOBILITY; ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELDS; ELECTRIC RESISTANCE; GATES (TRANSISTOR);

LONG-CHANNEL TRANSISTORS; METALLURGICAL GATE LENGTH; NANOMETER PRECISION; SHORT-CHANNEL TRANSISTORS;

MOSFET DEVICES;

EID: 35148872102     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.904011     Document Type: Article

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