Metal organic vapor phase epitaxy of InAsP/InP(001) quantum dots for 1.55 μm applications: Growth, structural, and optical properties

Journal of Applied Physics

Volumn 104, Issue 4, 2008, Pages

  Michon, A ^a   Hostein, R ^a   Patriarche, G ^a   Gogneau, N ^a   Beaudoin, G ^a   Beveratos, A ^a   Robert Philip, I ^a   Laurent, S ^a   Sauvage, S ^a   Boucaud, P ^a   Sagnes, I ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYING; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; INDIUM ALLOYS; INDIUM ARSENIDE; NANOCRYSTALS; OPTICAL PROPERTIES; ORGANOMETALLICS; PHOSPHORUS COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; STRUCTURAL PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY;

FLOW RATIOS; INAS QUANTUM DOTS; INASP/INP; METAL-ORGANIC VAPOR PHASE EPITAXY; QUANTUM DOT EMISSION;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 50849101376     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2968338     Document Type: Article

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