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Materials Science and Engineering: B

Volumn 94, Issue 2-3, 2002, Pages 243-246

Room-temperature emission from InAs1-xPx/InP self-assembled quantum dots at wavelengths between 1.2 and 1.35 μm

(1) Faradjev, F E a

a ROYAL INSTITUTE OF TECHNOLOGY KTH (Sweden)

Author keywords

AFM; InAs InP; MOCVD; Photoluminescence; Room temperature emission; Self assembled quantum dots

Indexed keywords

ATOMIC FORCE MICROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM PHOSPHIDE;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036606388 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(02)00096-X Document Type: Article

Times cited : (3)

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