Fabrication of InAs quantum dots on InP(100) by metalorganic vapor-phase epitaxy for 1.55 μm optical device applications

Applied Physics Letters

Volumn 85, Issue 19, 2004, Pages 4331-4333

  Kawaguchi, Kenichi ^a,b   Ekawa, Mitsuru ^a,b   Kuramata, Akito ^a,b   Akiyama, Tomoyuki ^a,b   Ebe, Hiroji ^c   Sugawara, Mitsuru ^c   Arakawa, Yasuhiko ^b,d  

^a FUJITSU LABORATORIES LTD   (Japan)

^b Optoelectronic Industry and Technology Development Association   (Japan)

^c INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLAYERS; OPTICAL DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM; THICKNESS CONTROL; VAPOR PHASE EPITAXY;

METALORGANIC VAPOR-PHASE EPITAXY (MOVPE); OPTICAL TELECOMMUNICATION; PHOSPHORUS-CONTAINING MATERIALS; TRIETHYL-GALLIUM (TEG);

SEMICONDUCTOR QUANTUM DOTS;

EID: 10844245502     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1814442     Document Type: Conference Paper

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