Shapes of InAs quantum dots on InGaAsInP

Applied Physics Letters

Volumn 85, Issue 26, 2004, Pages 6383-6385

  Hwang, Heedon ^a,c   Yoon, Sukho ^a,d   Kwon, Hyeok ^a,e   Yoon, Euijoon ^a   Kim, Hong Seung ^b   Lee, Jeong Yong ^b   Cho, Benjamin ^c  

^a Seoul National University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^d Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^e LG Electronics Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELONGATION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM); KINETIC PATHWAYS; RHOMBUS DOTS;

ATOMIC FORCE MICROSCOPY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; KINETIC ENERGY; LATTICE CONSTANTS; MONOLAYERS; OPTICAL DEVICES; PROBES; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 13444271843     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1840123     Document Type: Article

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