P-type doping utilizing nitrogen and Mn doping of ZnO using MOCVD for ultraviolet lasers and spintronic applications

Journal of Electronic Materials

Volumn 34, Issue 6, 2005, Pages 949-952

  Egerton, E James ^a   Sood, Ashok K ^a   Singh, Rajwinder ^a   Puri, Yash R ^a,b   Davis, Robert F ^c   Pierce, Jon ^c   Look, David C ^d   Steiner, Todd ^e  

^a Magnolia Optical Technologies Inc   (United States)

^b UNIVERSITY OF MASSACHUSETTS LOWELL   (United States)

^c North Carolina State University   (United States)

^d WRIGHT STATE UNIVERSITY   (United States)

^e AIR FORCE OFFICE OF SCIENTIFIC RESEARCH   (United States)

Author keywords

Doping; p type; ZnO

Indexed keywords

BIOSENSORS; MANGANESE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; OPTIMIZATION; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; SIGNAL TO NOISE RATIO; SPECTRUM ANALYSIS; ULTRAVIOLET RADIATION;

HALL MEASUREMENTS; LATTICE-MATCHED SUBSTRATES; P-TYPE; ZNO;

ZINC OXIDE;

EID: 21644490320     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0048-y     Document Type: Conference Paper

References (3)

1. D.C. Look, Mater. Sci. Eng B 80, 383, (2001).
2. A. Dmitriev, V. Kachorovski, M.S. Shur, and M. Stroscio, Int. J. High Speed Electron. 10 (2000).
3. Meyer, Phys. Status Solidi (b), p. 231 (2004).