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Volumn 516, Issue 23, 2008, Pages 8307-8314

Erratum to "Rapid synthesis of tantalum oxide dielectric films by microwave assisted atmospheric chemical vapor deposition" [Thin Solid Films 516 (2008) 8307-8314] (DOI:10.1016/j.tsf.2008.03.049);Rapid synthesis of tantalum oxide dielectric films by microwave microwave-assisted atmospheric chemical vapor deposition

Author keywords

Microwave deposition; Rapid dielectric synthesis; Thick Ta2O5 film

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL EQUIPMENT; CHEMICAL VAPOR DEPOSITION; DEPOSITION RATES; DIELECTRIC MATERIALS; FILM GROWTH; HIGH-K DIELECTRIC; MICROWAVES; OXIDE FILMS; SCANNING ELECTRON MICROSCOPY; TANTALUM OXIDES; X RAY DIFFRACTION;

EID: 50849088972     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.10.034     Document Type: Erratum
Times cited : (1)

References (39)
  • 1
    • 85103550271 scopus 로고    scopus 로고
    • Huff H.R., and Gilmer D.C. (Eds), Springer, New York
    • Wallace R.M., and Wilk G.D. In: Huff H.R., and Gilmer D.C. (Eds). High Dielectric Constant Materials: VLSI MOSFET Applications. Springer Series in Advanced Microelectronics vol. 16 (2005), Springer, New York 253
    • (2005) Springer Series in Advanced Microelectronics , vol.16 , pp. 253
    • Wallace, R.M.1    Wilk, G.D.2
  • 14
    • 0003598971 scopus 로고    scopus 로고
    • FIZ Karlsruhe and National Institute of Standards and Technology (NIST)
    • ICSD - Inorganic Crystal Structure Database (2007), FIZ Karlsruhe and National Institute of Standards and Technology (NIST)
    • (2007) ICSD - Inorganic Crystal Structure Database


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.