Interrelationship between electrical and physical properties of subcritical Si-Ge layers grown directly on silicon for short channel high-performance pMOSFETs

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2054-2057

  Kelly, D Q ^a,b   Lee, S ^a,b   Kalra, P ^a,c   Harris, R ^a   Oh, J ^a   Kirsch, P ^a,e   Banerjee, S K ^b   Majhi, P ^a,d   Tseng, H ^f   Jammy, R ^a,e  

^a SEMATECH   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d INTEL CORPORATION   (United States)

^e IBM   (United States)

^f IBM ^*

Author keywords

Germanium; Heterostructures; Mobility; MOSFETs

Indexed keywords

CHANNEL EFFECTS; CHANNEL THICKNESS; GATE STACKS;

ELECTRIC CHARGE; GERMANIUM; HETEROJUNCTIONS; SILICON;

MOSFET DEVICES;

EID: 34249078331     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.133     Document Type: Article

References (3)

1. K. Saraswat, C. Chui, D. Kim, T. Krishnamohan, A. Pethe, High mobility and novel device structures for high performance nanosclae MOSFETs, IEEE IEDM Tech. Dig. 2006, 659-662.
2. P. Zimmerman, G. Nicholas, B. Jauger, B. Kaczer, A. Stesmans, L. Rahnarsson, D. Brunco, F. Leys, M. Caymax, G. Winderickx, K. Opsomer, M. Meuris, M. Heyns, High performance Ge pMOS devices using a Si-compatible process flow, IEEE IEDM Tech. Dig. 2006, 655-658.
3. Lee M.-L., Fitzgerald E.A., Bulsara M.T., Currie M.T., and Lochtefeld A. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors. J. Appl. Phys. 97 (2005) 1-27 and references therein