A unified model for gate capacitance-voltage characteristics and extraction of parameters of Si/SiGe heterostructure pMOSFETs

IEEE Transactions on Electron Devices

Volumn 54, Issue 8, 2007, Pages 1889-1896

  Bindu, B ^a   DasGupta, Nandita ^a   DasGupta, Amitava ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

Gate capacitance; MOSFET model; Quantum mechanical effects; Silicon germanium; Strained silicon

Indexed keywords

CAPACITANCE; GATE DIELECTRICS; HETEROJUNCTIONS; MATHEMATICAL MODELS; QUANTUM THEORY; SEMICONDUCTOR DOPING; SILICON COMPOUNDS; THRESHOLD VOLTAGE; VALENCE BANDS;

GATE CAPACITANCE-VOLTAGE CHARACTERISTICS; SILICON GERMANIUM;

MOSFET DEVICES;

EID: 34547868818     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.900013     Document Type: Article

References (10)

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