Radiation damage formation in InP, InSb, GaAs, GaP, Ge, and Si due to fast ions

Physical Review B - Condensed Matter and Materials Physics

Volumn 78, Issue 5, 2008, Pages

  Kamarou, A ^a   Wesch, W ^a   Wendler, E ^a   Undisz, A ^a   Rettenmayr, M ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 50049128182     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.78.054111     Document Type: Article

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