Lattice preamorphization by ion irradiation: Fluence dependence of the electronic stopping power threshold for amorphization

Journal of Applied Physics

Volumn 97, Issue 9, 2005, Pages

  Agullo Lopez F ^a,b   Garcia G ^b   Olivares, J ^c  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^b CENTRO DE MICROANÁLISIS DE MATERIALES   (Spain)

^c CSIC   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYERS; FLUENCE; ION IRRADIATION; LATTICE PREAMORPHIZATION;

DIFFERENTIAL EQUATIONS; DOPING (ADDITIVES); IMPURITIES; IONS; IRRADIATION; SILICON; THERMAL EFFECTS;

AMORPHIZATION;

EID: 18844372499     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1896444     Document Type: Article

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