Damage formation and annealing in InP due to swift heavy ions

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 225, Issue 1-2 SPEC. ISS., 2004, Pages 129-135

  Kamarou, A ^a   Wesch, W ^a   Wendler, E ^a   Klaumunzer S ^b  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

Defect formation and annealing; InP; Swift heavy ions (SHI); Threshold electronic energy deposition

Indexed keywords

ANNEALING; ENERGY MANAGEMENT; INDIUM COMPOUNDS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAMPLING; TRANSISTORS;

DEFECT FORMATION AND ANNEALING; POWER CONSUMPTION; SWIFT HEAVY IONS (SHI); THRESHOLD ELECTRONIC ENERGY DEPOSITION;

HEAVY IONS;

EID: 4344675508     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.02.031     Document Type: Conference Paper

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