Effect of high electronic excitation in swift heavy ion irradiated semiconductors

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 257, Issue 1-2 SPEC. ISS., 2007, Pages 283-286

  Wesch, W ^a   Kamarou, A ^a   Wendler, E ^a   Undisz, A ^b   Rettenmayr, M ^b  

^a Institut für Festkörperphysik   (Germany)

^b FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

Ion tracks; Radiation damage; Semiconductors; Swift heavy ion irradiation; Thermal spike model

Indexed keywords

AMORPHOUS MATERIALS; HEAVY IONS; ION BOMBARDMENT; MELTING POINT; RADIATION DAMAGE;

AMORPHOUS TRACKS; ELECTRONIC EXCITATION; ION TRACKS; SWIFT HEAVY ION IRRADIATION; THERMAL SPIKE MODEL;

SEMICONDUCTOR MATERIALS;

EID: 34047096765     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.01.012     Document Type: Article

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