Rapid thermal annealing characteristics of Be implanted into InSb

Applied Surface Science

Volumn 126, Issue 3-4, 1998, Pages 231-234

  Liu, Jialu ^a   Zhang, Tingqing ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

Compound semiconductor; Ion implantation; Rapid thermal annealing (RTA)

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; BERYLLIUM; CRYSTAL DEFECTS; DIFFUSION; PYROLYSIS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM COMPOUNDS; SURFACES;

PEAK CONCENTRATION; RAPID THERMAL ANNEALING;

ION IMPLANTATION;

EID: 0032473725     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00695-8     Document Type: Article

References (2)

1. S.J. Pearton, S. Nakahara, A.R. Von Neida, K.T. Short, L.J. Oster, J. Appl. Phys. 66 (1989) 1942.
2. E.W. Kreutz, Surf. Technol. 11 (1980) 171.