Trapping and detrapping of electrons photoinjected from silicon to ultrathin SiO2 overlayers. I. In vacuum and in the presence of ambient oxygen

Journal of Applied Physics

Volumn 88, Issue 2, 2000, Pages 896-908

  Shamir, N ^a,b   Mihaychuk, J G ^a,c   Van Driel, H M ^a  

^a UNIVERSITY OF TORONTO   (Canada)

^b NUCLEAR RESEARCH CENTER NEGEV   (Israel)

^c DALSA Corporation   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001339081     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373753     Document Type: Article

References (31)

1. E. Takeda, C. Y. Yang, and A. M. Hamada, Hot-carrier Effects in MOS Devices (Academic, San Diego, 1995).
2. E. M. Allegretto and J. A. Bardwell (unpublished).
3. T. K. Whidden, P. Thanikasalan, M. J. Rack, and D. K. Ferry, J. Vac. Sci. Technol. B 13, 1618 (1995).
4. H. Richter, T. E. Orlowski, M. Kelly, and G. Margaritondo, J. Appl. Phys. 56, 2351 (1984); T. E. Orlowski and D. A. Mantell, ibid. 64, 4410 (1988).
5. H. Richter, T. E. Orlowski, M. Kelly, and G. Margaritondo, J. Appl. Phys. 56, 2351 (1984); T. E. Orlowski and D. A. Mantell, ibid. 64, 4410 (1988).
6. 2 System, edited by P. Balk (Elsevier, Amsterdam, 1988), p. 221.
7. D. J. DiMaria, E. Cartier, and D. Arnold, J. Appl. Phys. 73, 3367 (1993).
8. G. Lüpke, D. J. Bottomley, and H. M. van Driel, Phys. Rev. B 47, 10389 (1993).
9. J. Bloch, J. G. Mihaychuk, and H. M. van Driel, Phys. Rev. Lett. 77, 920 (1996).
10. J. G. Mihaychuk, J. Bloch, Y. Liu, and H. M. van Driel, Opt. Lett. 20, 2063 (1995).
11. J. F. McGilp, Prog. Surf. Sci. 49, 1 (1995).
12. N. Shamir, J. G. Mihaychuk, and H. M. van Driel, J. Vac. Sci. Technol. A 15, 2081 (1997).
13. O. A. Aktsipetrov, A. A. Fedyanin, E. D. Mishina, A. A. Nikulin, A. N. Rubtsov, C. W. van Hasselt, M. A. C. Devillers, and T. Rasing, Phys. Rev. Lett. 78, 46 (1997).
14. J. I. Dadap, X. F. Hu, N. M. Russell, J. G. Ekerdt, J. K. Lowell, and M. C. Downer, IEEE J. Sel. Top. Quantum Electron. 1, 1145 (1996).
15. U. Emmerichs, C. Meyer, H. J. Bakker, H. Kurz, C. H. Bjorkman, C. E. Shearon, Jr., Y. Ma, T. Yasuda, Z. Jing, G. Lucovsky, and J. L. Whitten, Phys. Rev. B 50, 5506 (1994).
16. C. Meyer, G. Lüpke, U. Emmerichs, F. Wolter, H. Kurz, C. H. Bjorkman, and G. Lucovsky, Phys. Rev. Lett. 74, 3001 (1995).
17. C. W. van Hasselt, M. A. C. Devillers, T. Rasing, and O. A. Aktsipetrov, J. Opt. Soc. Am. B 12, 33 (1995).
18. J. I. Dadap, X. F. Hu, M. H. Anderson, M. C. Downer, J. K. Lowell, and O. A. Aktsipetrov, Phys. Rev. B 53, R7607 (1996).
19. P. Godefroy, W. de Jong, C. W. van Hasselt, M. A. C. Devillers, and T. Rasing, Appl. Phys. Lett. 68, 1981 (1996).
20. A. Nahata, T. F. Heinz, and J. A. Misewich, Appl. Phys. Lett. 69, 746 (1996).
21. C. Sebbene, D. Bolmont, G. Guichar, and M. Balkanski, Phys. Rev. B 12, 3280 (1975).
22. J. G. Mihaychuk, N. Shamir, and H. M. van Driel, Phys. Rev. B 59, 2164 (1999).
23. See, for example, D. P. Woodruff and T. A. Delchar, Modern Techniques of Surface Science, 2nd ed. (Cambridge U.P., Cambridge, 1994), Chap. 7.5.
24. See, for example, A. Zangwill, Physics at Surfaces (Cambridge U.P., Cambridge, 1988), p. 21.
25. "S" probe controlled by a 07 Kelvin Probe Controller, produced by Besocke Delta Phi, GMBH.
26. E. O. Kane, Phys. Rev. 127, 131 (1962); G. W. Gobeli and F. G. Allen, ibid. 127, 141 (1962).
27. E. O. Kane, Phys. Rev. 127, 131 (1962); G. W. Gobeli and F. G. Allen, ibid. 127, 141 (1962).
28. G. H. Brugging and I. D. Baikie, Proceedings 2nd International Symposium on Ultra-clean Processing of Silicon Surfaces (UCPSS '94), 1994, p. 193.
29. N. Shamir, J. G. Mihaychuk, H. M. van Driel, and H. J. Kreuzer, Phys. Rev. Lett. 82, 359 (1999).
30. P. J. Caplan, E. H. Poindexter, and S. R. Morrison, J. Appl. Phys. 53, 541 (1982).
31. N. Shamir and H. M. van Driel, J. Appl. Phys. 88, 909 (2000).