High frequency scanning gate microscopy and local memory effect of carbon nanotube transistors

Nano Letters

Volumn 5, Issue 5, 2005, Pages 893-896

  Staii, Cristian ^a   Johnson Jr , Alan T ^a   Shao, Rui ^b   Bonnell, Dawn A ^b  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

^b UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

IMPEDANCE SPECTROSCOPY; NANOELECTRONICS; SCANNING GATE MICROSCOPY (SGM); SCANNING IMPEDANCE MICROSCOPY (SIM);

APPROXIMATION THEORY; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS; FREQUENCIES; NANOSTRUCTURED MATERIALS; RESONANCE; SCHOTTKY BARRIER DIODES;

CARBON NANOTUBES;

CARBON NANOTUBE;

ARTICLE; CHEMISTRY; ELECTROCHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; EVALUATION; IMPEDANCE; INFORMATION RETRIEVAL; INSTRUMENTATION; METHODOLOGY; NANOTECHNOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR; ULTRASTRUCTURE;

ELECTRIC IMPEDANCE; ELECTROCHEMISTRY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; INFORMATION STORAGE AND RETRIEVAL; MICROSCOPY, ELECTRON, SCANNING; NANOTECHNOLOGY; NANOTUBES, CARBON; TRANSISTORS;

EID: 19944412483     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl050316a     Document Type: Article

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15. An analysis similar to that used in ref 3 gives 19 meV for the Fermi energy at zero gate voltage for the top (strongest) defects seen in Figure 2b. This value is within 10% of that found for the strongest defects in ref 3.
16. tip = +8 V the local potential at the defect site is less than 80 mV. The defect region will be fully depleted (so the current suppressed to zero) only if the local potential exceeds V*, the defect depletion surface potential (ref 3). From SGM measurements and an analysis as outlined in ref 3, we find V* = 230 mV for the top defect in Figure 2b, a value much larger than the local potential at the defect site due to the tip gate.
17. Stau, C.; Johnson, A. T., unpublished.
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