Room-temperature single-electron effects in silicon nanocrystal memories

Applied Physics Letters

Volumn 87, Issue 18, 2005, Pages 1-3

  Pace, C ^a,b   Crupi, F ^a,b   Lombardo, S ^b   Gerardi, C ^c   Cocorullo, G ^a  

^a UNIVERSITY OF CALABRIA   (Italy)

^b CNR   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC POTENTIAL; ELECTRON EMISSION; SEMICONDUCTOR QUANTUM DOTS; SINGLE CRYSTALS;

BANDWIDTH MEASUREMENT; SILICON NANOCRYSTALS;

NANOSTRUCTURED MATERIALS;

EID: 27344446022     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2123377     Document Type: Article

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