Chemical vapor deposition and defect characterization of silicon carbide epitaxial films

Materials Research Society Symposium Proceedings

Volumn 891, Issue , 2006, Pages 591-596

  Chen, Yi ^a   Dhanaraj, Govindhan ^a   Chen, Hui ^a   Vetter, William ^a   Dudley, Michael ^a   Zhang, Hui ^a  

^a Stony Brook University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL LAYERS; EQUILIBRIUM MODELS; GROWTH TEMPERATURE; HALIDE CHEMICAL VAPOR DEPOSITION (HCVD);

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; FILM GROWTH;

SILICON CARBIDE;

EID: 33747497682     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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