Characterization of (Al)GaAs/AlAs distributed Bragg mirrors grown by MBE and LP MOVPE techniques

Journal of Crystal Growth

Volumn 310, Issue 18, 2008, Pages 4094-4101

  Jasik, A ^a   Gaca, J ^a   Wojcik M ^a   Muszalski, J ^a   Pierscinski K ^a   Mazur, K ^a   Kosmala, M ^b   Bugajski, M ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

A1. High resolution X ray diffraction; A1. Interfaces; A1. Roughening; A3. Low pressure metalorganic vapor phase epitaxy; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

ALUMINUM; ALUMINUM ARSENIDE; BRAGG CELLS; CRYSTAL GROWTH; EPITAXIAL GROWTH; GALLIUM ALLOYS; METALLORGANIC VAPOR PHASE EPITAXY; MIRRORS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OPTICAL DESIGN; OPTICAL INSTRUMENTS; REFLECTION; SEMICONDUCTING GALLIUM; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS;

(AL)GAAS; A1. HIGH-RESOLUTION X-RAY DIFFRACTION; A1. INTERFACES; A1. ROUGHENING; A3. LOW-PRESSURE METALORGANIC VAPOR PHASE EPITAXY; A3. MOLECULAR BEAM EPITAXY; B2. SEMICONDUCTING III-V MATERIALS; BRAGG MIRRORS; COMPLEMENTARY TECHNIQUES; DISTRIBUTED BRAGG MIRRORS; DISTRIBUTED-BRAGG REFLECTORS; FABRICATION PROCEDURE; GAAS SUBSTRATES; HIGH RESOLUTION X-RAY DIFFRACTION; METAL-ORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY (MBE); OPTICAL DEVICES; OPTICAL REFLECTANCE; QUARTER-WAVELENGTH;

MOLECULAR BEAM EPITAXY;

EID: 49749084694     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.06.035     Document Type: Article

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