Effects of composition grading at heterointefaces and layer thickness variations on Bragg mirror quality

Opto-Electronics Review

Volumn 16, Issue 1, 2008, Pages 12-17

  Gaca, J ^a   Wojcik M ^a   Jasik, A ^a   Pierscinski K ^a   Kosmala, M ^a   Turos, A ^a,b   Abdul Kaderd, A M ^c  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b SOLTAN INSTITUTE FOR NUCLEAR STUDIES   (Poland)

^c Helwan University   (Egypt)

Author keywords

DBR; HRXRD; MBE; Random thickness variation; RBS spectra; Reflectivity

Indexed keywords

ALUMINUM COMPOUNDS; GALLIUM ARSENIDE; GRADING; GROWTH RATE; III-V SEMICONDUCTORS; MIRRORS; MOLECULAR BEAM EPITAXY; NUMERICAL METHODS; REFLECTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SENSITIVITY ANALYSIS; SURFACE ROUGHNESS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

EVALUATION METHODS; HIGH-RESOLUTION X-RAY DIFFRACTION; HRXRD; INTENSITY MODULATORS; MIRROR REFLECTIVITY; OPTICAL REFLECTANCE; RUTHERFORD BACKSCATTERING/CHANNELLING; THICKNESS VARIATION;

SEMICONDUCTOR SATURABLE ABSORBER MIRRORS;

EID: 38149086204     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: 10.2478/s11772-007-0023-7     Document Type: Conference Paper

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