Influence of growth interruption on the heterointerface morphology of InGaAs/GaAs strained quantum wells

Journal of Crystal Growth

Volumn 169, Issue 4, 1996, Pages 629-636

  Botha, J R ^a   Leitch, A W R ^b  

^a UNIVERSITY OF THE WESTERN CAPE   (South Africa)

^b NELSON MANDELA METROPOLITAN UNIVERSITY   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN; SUBSTRATES; SURFACE PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY;

GROWTH INTERRUPTION; HETEROINTERFACE MORPHOLOGY; LINE WIDTH BROADENING; STEP BUNCHING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030566484     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00479-4     Document Type: Article

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