Comprehensive characterization of MOVPE-grown AlGaAs/AlAs distributed Bragg reflector structures by optical reflectance, X-ray diffraction and atomic force microscopy

Journal of Crystal Growth

Volumn 274, Issue 3-4, 2005, Pages 331-338

  Bhattacharya, A ^a   Nasarek, M ^b   Zeimer, U ^b   Klein, A ^b   Zorn, M ^b   Bugge, F ^b   Gramlich, S ^b   Weyers, M ^b  

^a TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

A1. High resolution X ray diffraction; A1. Interfaces; A1. Optical reflectivity; A3. Metalorganic vapor phase epitaxy; A3. Superlattices; B2. Semiconducting aluminium compounds

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; CRYSTAL ORIENTATION; GALLIUM COMPOUNDS; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; MIRRORS; MONOCHROMATORS; REFLECTION; SEMICONDUCTOR LASERS; SUPERLATTICES; SURFACE ROUGHNESS; X RAY DIFFRACTION; X RAYS;

DISTRIBUTED BRAGG REFLECTORS (DBR) STRUCTURES; HIGH RESOLUTION X-RAY DIFFRACTION; MISORIENTATION; OPTICAL REFLECTIVITY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 12244309535     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.10.008     Document Type: Article

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