Influence of covering on critical thickness of strained InxGa1-xAs layer

Thin Solid Films

Volumn 412, Issue 1-2, 2002, Pages 50-54

  Jasik, Agata ^a   Kosiel, Kamil ^a   Strupiński, Włodzimierz ^a   Wesołowski, Marek ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

Atomic force microscopy; Lattice parameters; Metalorganic chemical vapour deposition; Stress

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; HETEROJUNCTIONS; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM PHOSPHIDE; STRAIN; STRESSES; THICKNESS MEASUREMENT; THIN FILMS;

CRITICAL THICKNESS; STRAINED LAYERS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0037013520     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00312-7     Document Type: Conference Paper

References (10)