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Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 520-525
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1.5 μm VCSEL structure optimization for high-power and high-temperature operation
a
EPFL
(Switzerland)
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Author keywords
A3. MOVPE; A3. Quantum wells; B3. Laser diodes; Bl. Inalgaas
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
METALLORGANIC VAPOR PHASE EPITAXY;
MIRRORS;
OPTICAL COMMUNICATION;
OPTICAL INTERCONNECTS;
OPTICAL MICROSCOPY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR LASERS;
SEMICONDUCTOR QUANTUM WELLS;
THERMOCOUPLES;
TRANSMISSION ELECTRON MICROSCOPY;
TUNNEL JUNCTIONS;
X RAY DIFFRACTION ANALYSIS;
CARRIER GAS;
GROWTH OPTIMIZATION;
LONG WAVELENGTH EMITTING LASERS;
TUNNEL JUNCTION;
VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 9944234894
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.08.034 Document Type: Conference Paper |
Times cited : (24)
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References (8)
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