Resonant cavity light-emitting diodes grown by solid source MBE

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 346-351

  Orsila, S ^a   Leinonen, T ^a   Uusimaa, P ^a   Saarinen, M ^a   Guina, M ^a   Sipila P ^a   Vilokkinen, V ^a   Melanen, P ^a   Dumitrescu, M ^a   Pessa, M ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

A3. Molecular beam epitaxy; A3. Quantum wells; B2. Semiconducting III V materials; B3. Light emitting diodes

Indexed keywords

MIRRORS; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

BRAGG REFLECTORS; SOLID SOURCE MOLECULAR BEAM EPITAXY;

LIGHT EMITTING DIODES;

EID: 0035399351     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00719-9     Document Type: Conference Paper

References (9)

1. Solid source molecular beam epitaxy growth of GaInP/AlGaInP heterostructures and 600-nm-range quantum well laser diodes
2. Light emitting diode emitting at 650 nm with 200-MHz small signal modulation bandwidth