Resonant cavity light-emitting diodes at 660 and 880 nm

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 74, Issue 1, 2000, Pages 165-167

  Vilokkinen, V ^a   Sipila P ^a   Melanen, P ^a   Saarinen, M ^a   Orsila, S ^a   Dumitrescu, M ^a   Savolainen, P ^a   Toivonen, M ^a   Pessa, M ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; MIRRORS; MOLECULAR BEAM EPITAXY; OPTICAL RESONATORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; THERMODYNAMIC STABILITY;

DISTRIBUTED BRAGG REFLECTORS (DBR); MICROCAVITIES; RESONANT CAVITY LIGHT EMITTING DIODES;

LIGHT EMITTING DIODES;

EID: 0033740195     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00554-1     Document Type: Article

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