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Materials Science in Semiconductor Processing

Volumn 4, Issue 6, 2001, Pages 571-576

Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates

(3) Feng, Z C a Yang, T R b Hou, Y T c

a Axcel Photonics Inc (United States)

b NATIONAL TAIWAN NORMAL UNIVERSITY (Taiwan)

c NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

GaN; Infrared reflectance; Non destructive; Sapphire; Silicon

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTAL MICROSTRUCTURE; DAMPING; ELECTRON SCATTERING; EPITAXIAL GROWTH; HALL EFFECT; INFRARED SPECTROSCOPY; NONDESTRUCTIVE EXAMINATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SUBSTRATES; SURFACE PHENOMENA; SURFACE ROUGHNESS;

INFRARED REFLECTANCE ANALYSIS;

GALLIUM NITRIDE;

EID: 0035574701 PISSN: 13698001 EISSN: None Source Type: Journal
DOI: 10.1016/S1369-8001(02)00020-3 Document Type: Conference Paper

Times cited : (16)

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