In situ gravimetric monitoring of decomposition rate on the surface of (0001) c-plane sapphire for the high temperature growth of AlN

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2297-2300

  Akiyama, K ^a   Araki, T ^a   Murakami, H ^a   Kumagai, Y ^a   Koukitu, A ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

C-PLANE SAPPHIRE; CARRIER GASES; DECOMPOSITION RATES; HIGH-TEMPERATURE GROWTH; HYDROGEN PARTIAL PRESSURES; IN-SITU; NITRIDE SEMICONDUCTORS; SAPPHIRE SUBSTRATES; THERMAL STABILITY; WEIGHT CHANGES;

ATMOSPHERIC PRESSURE; ATMOSPHERICS; CORUNDUM; CRYSTALS; ELECTRIC CONDUCTIVITY; HYDROGEN; NITRIDES; NONMETALS; SAPPHIRE; SEMICONDUCTOR MATERIALS; THERMODYNAMIC STABILITY;

SEMICONDUCTOR GROWTH;

EID: 49449115866     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674816     Document Type: Conference Paper

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