Preparation of a freestanding AIN substrate by hydride vapor phase epitaxy at 1230°C using (111)Si as a starting substrate

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 17-19, 2007, Pages

  Kumagai, Yoshinao ^a   Nagashima, Toru ^a,b   Koukitu, Akinori ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b TOKUYAMA CORPORATION   (Japan)

Author keywords

(111)Si substrate; A1N substrate; Freestanding; HVPE; Hydride vapor phase epitaxy; Thick AlN layer

Indexed keywords

DISLOCATIONS (CRYSTALS); PHOTOLUMINESCENCE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

HYDRIDE VAPOR PHASE EPITAXY (HVPE); THICK ALN LAYER;

ALUMINUM COMPOUNDS;

EID: 34547909921     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L389     Document Type: Article

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