MOVPE-like HVPE of AlN using solid aluminum trichloride source

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 332-335

  Eriguchi, Ken ichi ^a   Murakami, Hisashi ^a   Panyukova, Uliana ^a   Kumagai, Yoshinao ^a   Ohira, Shigeo ^b   Koukitu, Akinori ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b Nippon Light Metal Company Ltd   (Japan)

Author keywords

A3. Vapor phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds

Indexed keywords

ALUMINUM NITRIDE; ELECTRON TRANSPORT PROPERTIES; HYDROCHLORIC ACID; LIGHT ABSORPTION; METALLORGANIC VAPOR PHASE EPITAXY; X RAY DIFFRACTION;

EPITAXIAL LAYERS; HIGH-QUALITY LAYERS; OPTICAL ABSORPTION MEASUREMENTS;

FILM GROWTH;

EID: 33846417652     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.035     Document Type: Article

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