Improvement of TDDB reliability in Cu damascene interconnect by using united hard-mask and Cap (UHC) structure

Proceedings of the IEEE 2003 International Interconnect Technology Conference, IITC 2003

Volumn , Issue , 2003, Pages 256-258

  Tada, M ^a   Harada, Y ^a   Ohtake, H ^a   Saito, S ^a   Onodera, T ^a   Hayashi, Y ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Dielectric breakdown; Dielectric measurements; Dielectric thin films; Dielectrics and electrical insulation; Etching; Leakage current; Life testing; Plasma simulation; Time measurement; Ultra large scale integration

Indexed keywords

DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC BREAKDOWN; ETCHING; INTEGRATION TESTING; LEAKAGE CURRENTS; PLASMA SIMULATION; RANDOM ACCESS STORAGE; RELIABILITY; TIME MEASUREMENT; ULSI CIRCUITS;

CU DAMASCENE INTERCONNECTS; DIELECTRIC MEASUREMENTS; DIELECTRIC THIN FILMS; DUAL DAMASCENE INTERCONNECT; INTERCONNECT RELIABILITY; LIFE-TESTING; LOW K DIELECTRICS; ULTRA-THIN BARRIERS;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 84944036573     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2003.1219769     Document Type: Conference Paper

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