Film Characterization of Cu diffusion barrier dielectrics for 90 nm and 65 nm technology node Cu interconnects

Proceedings of the IEEE 2003 International Interconnect Technology Conference, IITC 2003

Volumn , Issue , 2003, Pages 6-8

  Goto, K ^a   Yuasa, H ^b   Andatsu, A ^c   Matsuura, M ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b PANASONIC CORPORATION   (Japan)

^c Renesas Semiconductor Engineering Corp   (Japan)

Author keywords

Current measurement; Dielectric measurements; Leakage current; Plasma temperature; Semiconductor films; Silicon carbide; Spectroscopy; Stress; Temperature measurement; Time measurement

Indexed keywords

DIELECTRIC MATERIALS; DIFFUSION; DIFFUSION BARRIERS; ELECTRIC CURRENT MEASUREMENT; INTEGRATED CIRCUIT INTERCONNECTS; LEAKAGE CURRENTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICON CARBIDE; SILICON OXIDES; SPECTROSCOPY; STRESSES; TEMPERATURE MEASUREMENT; TIME MEASUREMENT;

65-NM TECHNOLOGIES; BIAS-TEMPERATURE-STRESS MEASUREMENTS; CU DIFFUSION BARRIER; DIELECTRIC MEASUREMENTS; FILM CHARACTERIZATIONS; PLASMA TEMPERATURE; ROBUST STABILITY; SEMICONDUCTOR FILMS;

COPPER;

EID: 84944032317     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2003.1219696     Document Type: Conference Paper

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