TDDB reliability improvement in Cu damascene by using a bilayer-structured PECVD SiC dielectric barrier

Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002

Volumn , Issue , 2002, Pages 200-202

  Chiang, C C ^a   Chen, M C ^a   Wu, Z C ^b   Li, L J ^b   Jang, S M ^b   Yu, C H ^b   Liang, M S ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; DEPOSITION RATES; DIELECTRIC FILMS; DIELECTRIC MATERIALS; PHOTORESISTS; SILICON CARBIDE;

DIELECTRIC BARRIER; DIELECTRIC STACK; ETCHING STOP; INTER-METAL DIELECTRICS; METALLIZATION STRUCTURES; PHOTORESIST STRIPPING; RELIABILITY IMPROVEMENT; TDDB LIFETIME;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 84961730203     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2002.1014933     Document Type: Conference Paper

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