Leakage and breakdown mechanisms in Cu damascene with a bilayer-structured α-SiCN/α-SiC dielectric barrier

Proceedings of the IEEE 2003 International Interconnect Technology Conference, IITC 2003

Volumn , Issue , 2003, Pages 201-203

  Chiang, Chiu Chih ^a   Ko, I Hsiu ^a   Chen, Mao Chieh ^a   Wu, Zhen Cheng ^b   Lu, Yung Cheng ^b   Jang, Syun Ming ^b   Liang, Mong Song ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Copper; Current measurement; Dielectric breakdown; Dielectric films; Etching; Integrated circuit interconnections; Leakage current; Semiconductor device breakdown; Temperature measurement; Thickness measurement

Indexed keywords

CARBON; COPPER; CRACKS; DANGLING BONDS; DIELECTRIC FILMS; ELECTRIC BREAKDOWN; ELECTRIC CURRENT MEASUREMENT; ETCHING; INTEGRATED CIRCUIT INTERCONNECTS; INTERFACES (MATERIALS); LEAKAGE (FLUID); LEAKAGE CURRENTS; SEMICONDUCTOR DEVICES; SILICON CARBIDE; TEMPERATURE MEASUREMENT; THICKNESS MEASUREMENT;

BREAKDOWN MECHANISM; FRENKEL-POOLE EMISSION; INTEGRATED CIRCUIT INTERCONNECTIONS; INTER-METAL DIELECTRICS; INTERFACIAL DEFECT; ORGANOSILICATE GLASS; SEMICONDUCTOR DEVICE BREAKDOWN; TIME DEPENDENT DIELECTRIC BREAKDOWN;

DIELECTRIC MATERIALS;

EID: 84944056599     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2003.1219754     Document Type: Conference Paper

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