Impact of low-k dielectrics and barrier metals on TDDB lifetime of Cu interconnects

IEEE International Reliability Physics Symposium Proceedings

Volumn 2001-January, Issue , 2001, Pages 355-359

  Noguchi, J ^a   Saito, T ^a   Ohashi, N ^a   Ashihara, H ^a   Maruyama, H ^a   Kubo, M ^a   Yamaguchi, H ^a   Ryuzaki, D ^a   Takeda, K I ^a   Hinode, K ^a  

^a HITACHI LTD   (Japan)

Author keywords

Capacitors; Delay; Dielectric breakdown; Dielectric devices; Laboratories; Large scale integration; Metallization; Thermal degradation; Thermal stresses; Tin

Indexed keywords

CAPACITORS; DEGRADATION; DIELECTRIC DEVICES; DIFFUSION BARRIERS; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; HEAVY IONS; INTEGRATED CIRCUIT INTERCONNECTS; LABORATORIES; LSI CIRCUITS; METALLIZING; METALS; PYROLYSIS; RANDOM ACCESS STORAGE; RELIABILITY; THERMAL STRESS; TIN;

BARRIER METAL THICKNESS; BARRIER PROPERTIES; DEGRADATION MECHANISM; DELAY; ELECTRIC FIELD STRENGTH; ELECTRICAL STRESS; LOW K DIELECTRICS; TIME DEPENDENT DIELECTRIC BREAKDOWN;

DIELECTRIC MATERIALS;

EID: 84891420150     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2001.922927     Document Type: Conference Paper

References (13)

1. D.Edelstein, J.Heidenreich, R.Goldblatt, W.Cote, C.Uzoh, N. Lustig, P.Roper, T.McDevitt, W.Motsiff, A.Simon, J.Dukovic, R.Wachnik, H.Rathore, R.Schulz, L.Su, S.Luce and J.Slattery, "Full Copper Wiring in a Sub-0.25μm CMOS ULSI Technology", Proceedings of IEDM 1997, pp. 773-776.
2. R.D.Goldblatt, B.Agarwala, M.B.Anand, E.P.Barth, G.A.Biery, Z.G.Chen, S.Cohen, J.B.Connolly, A.Cowley, T.Dalton, S.K.Das, C.R.Davis, A.Deustch, C.De.Wan, D.C.Edelstein, P.A.Emmi, C.G.Faltermeirer, J.A.Fitzsimmons, J.Hedrick, J.E.Heidenreich, C.K.Hu, J.P.Hummel, P.Jones, E.Kaltalioglu, B.E.Kastenmeier, M.Krishnan, W.F.Landers, E.Liniger, J.Liu, N.E.Lustig, S.Malhotra, D.K.Manager, V.McGahay, R.Mih, H.A.Nye, S.Purushothaman, H.A.Rathore, S.C.Seo, T.M.Shaw, A.H.Simon, T.A.Spooner, M.Stetter, R.A.Wachnik and J.G.Ryan, "A High Performance 0.13mm Copper BEOL Technology with Low-K Dielectric", Proceedings of IEDM 2000, pp. 261-264.
3. G. Raghavan, C. Chiang, P.B. Anders, S. Tzeng, R. Villasol, G. Bai, M. Bohr, and D.B. Fraser, "Diffusion of Copper through Dielectric Films under Bias Temperature Stress", Thin Solid Films, vol. 262, pp. 168-176 (1995).
4. J.Noguchi, N.Ohashi, J.Yasuda, T.Jimbo, H.Yamaguchi, N.Owada, K.Takeda, and K.Hinode, "TDDB Improvement in Cu Metallization under Bias Stress", Proceedings of IRPS 2000, pp. 339-343.
5. T.Furusawa, N.Sakura, D.Ryuzaki, S.Kondo, K.Takeda, S.Machida and K.Hinode, "Simple, Reliable Cu/low-k Interconnect Integration Using Mechanically-strong Low-k Dielectric Material : Silicon-oxycarbide", Proceedings of IITC 2000, pp. 222-224.
6. T. Saito, N. Ohashi, J. Yasuda, J. Noguchi, T. Imai, K. Sasajima, K. Hiruma, H. Ymaguchi, and N. Owada, "Impact of Low Pressure Long Throw Sputtering Method on Submicron Copper Metallization", Proceedings of IITC 1998, pp. 160-162.
7. H.Ashihara, T.Oshima, K.Fukuda, K.Kawasaki, K,Ishikawa, A.Satoh, H.Miyazaki, H.Yamaguchi and T.Saito, "Via Yield Improvement due to Optimization of PVD Seed/Barrier Deposition Process", Proceedings of AMC 2000, pp. 128-129.
8. T.Oshima, T.Tamaru, K.Ohmori, H.Aoki, H.Ashihara, T.Saito, H.Yamaguchi, M.Miyauchi, K.Torii, J.Murata, A.Satoh, H.Miyazaki and K.Hinode, "Improvement of Thermal Stability of Via Resistance in Dual Damascene Copper Interconnection", Proceedings of IEDM 2000, pp. 123-126.
9. S.Kondo, N.Sakua, Y.Homma, Y.Goto, N.Ohashi, H.Yamaguchi, N.Owada, "Complete-Abrasive-Free Process for Copper Damascene Interconnection", Proceedings of IITC 2000, pp. 253-255.
10. H.Yamaguchi, N.Ohashi, T.Imai, K.Torii, J.Noguchi, T.Fujiwara, T.Saito, N.Owada, Y.Homma, S.Kondo and K.Hinode, "A 7 Level Metallization with Cu Damascene Process Using Newly Developed Abrasive Free Polishing", Proceedings of IITC 2000, pp. 264-266.
11. K.Takeda, K.Hinode, I.Oodake, N.Oohashi, and H.Yamaguchi, "Enhanced Dielectric Breakdown Lifetime of the Copper/Silicon Nitride/Silicon Dioxide Structure", Proceedings of IRPS 1998, pp. 36-41.
12. x Layers for Copper Metallization", Proceedings of IITC 2000, pp. 191-193.
13. MEDICI is provided by Avant!.