Trapped charge induced gate oxide breakdown

Journal of Applied Physics

Volumn 96, Issue 6, 2004, Pages 3388-3398

  Neugroschel, Arnost ^a   Wang, Lingquan ^a   Bersuker, Gennadi ^b  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DENSITY; GATE OXIDES; INTERFACE TRAP DENSITY; TIME-TO-FAILURE (TTF);

ANNEALING; CONCENTRATION (PROCESS); CORRELATION METHODS; CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; ELECTRIC FIELDS; ELECTRON TRAPS; ELECTRON TUNNELING; FIELD EFFECT TRANSISTORS; IMPURITIES; MATHEMATICAL MODELS; MOS DEVICES; POLYSILICON; STRESSES; THRESHOLD VOLTAGE;

SILICA;

EID: 4944240461     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1781766     Document Type: Article

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