Method for determination of carrier capture cross-sections at Si/SiO 2 interface

Electronics Letters

Volumn 40, Issue 2, 2004, Pages 148-149

  Wang, L ^a   Neugroschel, A ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CAPACITANCE; ELECTRON TRAPS; ENERGY GAP; FERMI LEVEL; GATES (TRANSISTOR); INTEGRATION; LEAST SQUARES APPROXIMATIONS; SEMICONDUCTING SILICON; SILICA;

CARRIER CAPTURE CROSS-SECTIONS; TUNNELLING CURRENTS;

MOS DEVICES;

EID: 0742287111     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20040092     Document Type: Article

References (5)

1. Neugroschel, A., and Sah, C.-T.: 'Direct-current measurements of oxide and interface traps on oxidized silicon', IEEE Trans. Electron Devices, 1995, 42, pp. 1657-1662
2. Cai, J., and Sah, C.-T.: 'Interfacial electronic traps in surface controlled transistors', IEEE Trans. Electron Devices, 2000, 47, pp. 576-583
3. 2 electrical properties as determined by the MIS conductance technique', Bell Syst. Tech. J., 1966, 46, p. 1055
4. Groeseneken, G., Maes, H.E., Beltran, N., and De Keersmaecker, R.F.: 'A reliable approach to charge-pumping measurements in MOS transistors', IEEE Trans. Electron Devices, 1984, 31, pp. 42-53
5. Sah, C.-T.: 'Fundamentals of solid-state electronics' (World Scientific, Singapore, 1991)