Temperature dependence of surface recombination current in MOS transistors

IEEE Transactions on Electron Devices

Volumn 48, Issue 9, 2001, Pages 2095-2101

  Wang, Yih ^b   Neugroschel, Arnost ^a,c   Sah, Chih Tang ^a,c  

^a IEEE   (United States)

^b INTEL CORPORATION   (United States)

^c J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

Bipolar junction transistors; DCIV characteristics; DCIV methodology; Interface recombination; Interface traps; Silicon silicon dioxide; Surface recombination; Surface states

Indexed keywords

BASEWELL TERMINAL CURRENT; BIPOLAR JUNCTION TRANSISTORS; ELECTRON HOLE RECOMBINATION; EMITTER BASE FORWARD BIAS VOLTAGE; INTERFACE RECOMBINATION; INTERFACE TRAPS; SILICON SILICON DIOXIDE; SURFACE RECOMBINATION CURRENT; SURFACE STATES;

BIPOLAR TRANSISTORS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRON ENERGY LEVELS; ELECTRON TRAPS; ENERGY GAP; SEMICONDUCTING SILICON COMPOUNDS; SURFACE PHENOMENA; THERMAL EFFECTS; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0035444560     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.944201     Document Type: Article

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