Ultra-high-performance 0.13-μm embedded DRAM technology using TiN/HfO2/TiN/W capacitor and body-slightly-tied SOI

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 831-834

  Aoki, Y ^a   Ueda, T ^a   Shirai, H ^a   Sakoh, T ^a   Kitamura, T ^a   Arai, S ^a   Sakao, M ^a   Inoue, K ^a   Takeuchi, M ^a   Sugimura, H ^a   Hamada, M ^a   Wake, T ^a   Naritake, I ^a   Iizuka, T ^a   Yamamoto, T ^a   Ando, K ^a   Noda, K ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CAPACITORS; COMPUTER SIMULATION; DYNAMIC RANDOM ACCESS STORAGE; ELECTRODES; LOGIC DEVICES; TRANSISTORS;

FLOATING-BODY EFFECTS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0036923411     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. S. Arai et al., IEDM Tech.Dig., p 403-406, (2001)
2. M. Takeuchi et al., Symp. on VLSI Tech., p29-30, (2001)
3. T. Kudo et al., Symp. on VLSI Tech., p 168-169, (2002)