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Volumn , Issue , 2006, Pages 1899-1902

A highly survivable 3-7 GHz GaN low-noise amplifier

Author keywords

Amplifier noise; Integrated circuit noise; Microwave FET amplifiers; MMIC amplifiers; Noise; Semiconductor device noise

Indexed keywords

FREQUENCY BANDS; GALLIUM NITRIDE; LOCAL AREA NETWORKS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NOISE FIGURE; SPURIOUS SIGNAL NOISE;

EID: 33846598435     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2006.249786     Document Type: Conference Paper
Times cited : (27)

References (6)
  • 6
    • 21644433656 scopus 로고    scopus 로고
    • Temperature-Dependence of a GaN-Based HEMT Monolithic X-Band Low Noise Amplifier
    • R.S. Schwindt, V. Kumar, O. Aktas, J.-W. Lee, L Adesida, "Temperature-Dependence of a GaN-Based HEMT Monolithic X-Band Low Noise Amplifier," in: 2004 IEEE CSIC Dig., 2004, pp. 201-204.
    • (2004) 2004 IEEE CSIC Dig , pp. 201-204
    • Schwindt, R.S.1    Kumar, V.2    Aktas, O.3    Lee, J.-W.4    Adesida, L.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.