Reliability Evaluation of AlGaN/GaN HEMTs grown on SiC Substrate

Proceedings IEEE Lester Eastman Conference on High Performance Devices

Volumn , Issue , 2002, Pages 436-442

  Lee, C ^a   Witkowski, L ^a   Muir, M ^a   Tserng, H Q ^a   Saunier, P ^a   Wang, H ^b   Yang, J ^b   Khan, M A ^b  

^a TRIQUINT SEMICONDUCTOR   (United States)

^b UNIVERSITY OF SOUTH CAROLINA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; GALLIUM NITRIDE; MICROWAVES; SILICON CARBIDE; SUBSTRATES; TRANSCONDUCTANCE;

MICROWAVE FREQUENCIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0242365522     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. L. F. Eastman, Joint ONR/MURI Review (5/15-16, 2001) CA, USA.
2. I. Daumiller, C. Kirchner, M. Kamp, K. J. Ebeling, and E. Kohn, "Evaluation of the temperature stability of AlGaN/GaN heterostructure FET's," IEEE Electron Device Lett., vol. 20, no. 9, pp. 448-450, Sept. 1999.
3. H. Kim, V. Tilak, B. M. Green, J. A. Smart, W. J. Schaff, J. R. Shealy, and L. F. Eastman, "Degradation characteristics of AlGaN/GaN high electron mobility transistors," IEEE Reliability Physics Symposium, Orlando, 2001, pp. 214-218.
4. D. Dieci, R. Menozzi, C. Lanzieri, L. Polenta, and C. Canali, "Hot electron effects on A10.25Ga0.75As/GaAs power HFET's under off-state and on-state electrical stress conditions," IEEE Trans. Electron Devices, vol. 47, no. 2, pp. 261-268, Feb. 2000.
5. A.S. Wakita, H. Rohdin, C-Y. Su, N. Moll, A. Nagy, and V.M. Robbins, "Drain resistance degradation under high fields in AlInAs/GaInAs MODFETs," IEEE Indium Phosphide Related Materials, 1997, pp. 376-379.
6. D. Dieci, G. Sozzi, R. Menozzi, E. Tediosi, C. Lanzieri, and C. Canali, "Electric-Field-Related Reliability of AlGaAs/GaAs power HFETs: bias dependence and correlation with breakdown," IEEE Trans. Electron Devices, vol. 48, no. 9, pp. 1929-1937, Sept. 2001.