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Volumn , Issue , 2005, Pages 89-92

50% PAE WCDMA basestation amplifier implemented with GaN HFETs

Author keywords

Base station power amplifier; Digital predistortion; Efficiency; Envelope tracking; GaN HFET; WCDMA

Indexed keywords

DIGITAL PREDISTORTION (DPD); OFFSET FREQUENCY; POWER-ADDED EFFICIENCY (PAE);

EID: 30944450427     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2005.1531768     Document Type: Conference Paper
Times cited : (34)

References (8)
  • 3
    • 4544254165 scopus 로고    scopus 로고
    • A 28 v 250W GaAs power FET with high gain of 15.5 dB for W-CDMA base stations
    • M. Nagahara, K. Inoue, S. Sano, H. Takahashi, and S. Takase, "A 28 V 250W GaAs power FET with high gain of 15.5 dB for W-CDMA base stations," 2004 IEEE MTT-s Dig., pp. 983-985, 2004
    • (2004) 2004 IEEE MTT-s Dig. , pp. 983-985
    • Nagahara, M.1    Inoue, K.2    Sano, S.3    Takahashi, H.4    Takase, S.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.