Filling trenches on a SiO2 substrate with Cu using a hot refractory anode vacuum arc

Microelectronic Engineering

Volumn 85, Issue 8, 2008, Pages 1713-1716

  Beilis, I I ^a   Grach, D ^a   Shashurin, A ^a   Boxman, R L ^a  

^a TEL AVIV UNIVERSITY   (Israel)

Author keywords

Copper plasma; Deposition; Interconnect; Metallic film; Refractory anode; Trenches; Vacuum arc

Indexed keywords

COPPER; COPPER ALLOYS; EPITAXIAL GROWTH; PLASMA SOURCES; PLASMAS; SILICON COMPOUNDS; VACUUM APPLICATIONS; VACUUM TECHNOLOGY;

APPLIED (CO); ARC CURRENTS; DEEP TRENCH (DT); EXPANDING PLASMAS; HOT REFRACTORY ANODE VACUUM ARC (HRAVA); SI(2 1 1) SUBSTRATES;

CAVITY RESONATORS;

EID: 48949116087     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.04.018     Document Type: Article

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