Physical and electrical properties in metal-oxide-Si capacitors with various gate electrodes and gate oxides

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 4, 1997, Pages 942-947

  Chang Liao, K S ^a   Chen, L C ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000133743     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589512     Document Type: Article

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