Thin films of HfO2 for high- k gate oxide applications from engineered alkoxide- and amide-based MOCVD precursors

Journal of the Electrochemical Society

Volumn 154, Issue 3, 2007, Pages

  Thomas, Reji ^a   Rije, Eduard ^a   Ehrhart, Peter ^a   Milanov, Andrian ^b   Bhakta, Raghunandan ^b   Bauneman, Arne ^b   Devi, Anjana ^b,c   Fischer, Roland ^b   Waser, Rainer ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b RUHR UNIVERSITY BOCHUM   (Germany)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; DENSIFICATION; HAFNIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SILICON;

CRYSTAL DENSITY; GATE OXIDE APPLICATIONS; LIQUID INJECTION; MONONUCLEAR PRECURSORS;

THIN FILMS;

EID: 33846952219     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2431324     Document Type: Article

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